Resonance Rayleigh scattering by periodic semiconductor multiple quantum-well structures is studied experimentally and theoretically.
We report the first identification by any spectroscopic method of shallow donors in bulk gallium arsenide.
Several new infrared absorption bands have been discovered in hydrogen passivated silicon doped with P, As, and Sb.
(Title was originally Measuring the Impact of Fault-Tolerant CORBA on the Performance of Distribtued Systems) Recently, there has been a significant trend towards developing distributed systems bas
In this paper, we investigate how Joint Communication And Sensing (JCAS) can be used to improve the Inertial Mea- surement Unit (IMU)-based tracking accuracy of eXtended Reality (XR) Head-Mounted D
The magnitude of potential fluctuations due to remote ionized dopants is calculated for selectivity doped heterostructures using unscreened screened Coulomb-potentials.
The phenomenon of dopant dose loss through trapping at the Si-SiO sub 2 interface has important consequences for MOS device fabrication.
We investigated the effects of SrTiO sub 3 and seventeen different oxide dopants, namely Ca, Sc, La and Zr with possible substitution in the yttrium sites, K, Sr and Pb in the barium sites and Li,
Dopant atoms in semiconductors need to be imaged with increasing precision to help keep Moore's law on track.
Dopants in any layer of the silicide-silicon or silicide-polycrystalline silicon bilayer structures are found to distribute readily throughout the bilayer affecting the electrical and the mechanica
