Publications

Dopant atoms in semiconductors need to be imaged with increasing precision to help keep Moore's law on track.

Dopants in any layer of the silicide-silicon or silicide-polycrystalline silicon bilayer structures are found to distribute readily throughout the bilayer affecting the electrical and the mechanica

EXAFS experiments on La2-xSrxCuO4 (LSCO) have revealed that the Sr dopants occupy two kinds of sites, a magnetic Cu one with long Sr-apical O bonds, and a metallic Cu one with short Sr-apical O bon

The diffusion depth and total amount of deuterium incorporated in GaAs during plasma exposure is found to depend strongly on the conductivity type of the surface.

This paper studies decentralized, Fountain and network-coding based strategies for facilitating data collection in circular wireless sensor networks, which rely on the stochastic diversity of data

Landau - Fermi liquid theory, with its pivotal assertion that electrons in metals can be simply understood as independent particles with effective masses replacing the free electron mass, has been

Absolute rates for the intrinsic reaction between Cl atoms and surfaces of P-doped polycrystalline silicon, P-doped Si (100) and As, Sb-doped Si(111) substrates were measured for the first time as

Digital connectivity will become pervasive in a few years.

In molecular-beam epitaxy a monolayer of Pb on the Si(111) surface induces single-crystal growth at temperatures well below those required for similar growth on a bare surface.

We investigate doping effects in ZnO layers using Li3N as a doping source by plasma-assisted molecular-beam epitaxy.