EXAFS experiments on La2-xSrxCuO4 (LSCO) have revealed that the Sr dopants occupy two kinds of sites, a magnetic Cu one with long Sr-apical O bonds, and a metallic Cu one with short Sr-apical O bon
The diffusion depth and total amount of deuterium incorporated in GaAs during plasma exposure is found to depend strongly on the conductivity type of the surface.
This paper studies decentralized, Fountain and network-coding based strategies for facilitating data collection in circular wireless sensor networks, which rely on the stochastic diversity of data
Landau - Fermi liquid theory, with its pivotal assertion that electrons in metals can be simply understood as independent particles with effective masses replacing the free electron mass, has been
Absolute rates for the intrinsic reaction between Cl atoms and surfaces of P-doped polycrystalline silicon, P-doped Si (100) and As, Sb-doped Si(111) substrates were measured for the first time as
Digital connectivity will become pervasive in a few years.
In molecular-beam epitaxy a monolayer of Pb on the Si(111) surface induces single-crystal growth at temperatures well below those required for similar growth on a bare surface.
We investigate doping effects in ZnO layers using Li3N as a doping source by plasma-assisted molecular-beam epitaxy.
We have succeeded for the first time in artificially tuning the conduction and valence band barrier heights at an abrupt intrinsic semiconductor- semiconductor heterojunction via a doping interface
The calculated band properties of the cuprate and bismuthate high-T sub c superconductors provide valuable insight regarding the chemistry and doping mechanisms that are operative in these compound
