Publications

We have succeeded for the first time in artificially tuning the conduction and valence band barrier heights at an abrupt intrinsic semiconductor- semiconductor heterojunction via a doping interface

The calculated band properties of the cuprate and bismuthate high-T sub c superconductors provide valuable insight regarding the chemistry and doping mechanisms that are operative in these compound

The doping of Zn (p-type) in GaAs and Al(0.35)Ga(-.65)As and that of Se (n-type in Al(0.35)Ga(0.65)As grown by the metal organic chemical vapor deposition method is studied.

The doping characteristics of S in the metalorganic vapor phase epitaxial growth of InP and GaInAs are studied using 3 different but consistent methods of determining the doping level in the crysta

VOR stands for "VHF Omnirange" a term used to describe a system of navigation using very-high-frequency omnidirectional radio beacons for determining the course of an aircraft.

We numerically investigate simulation conditions to accurately emulate the impact of four-wave mixing in 10Gbit/s systems based on low-dispersion fibre, such as the statistical impact of phase/time

Transient enhanced diffusion of dopants in silicon is frequently modeled using the ``+ 1{''} approximation of implantation damage.

We present a detailed study of double barrier strained Al(0.35)Ga(0.65)As/AlAs/GaAs/In(0.2)Ga(0.8)As quantum well infrared photodetectors on GaAs substrate.

Interpolative digital to analog converters generate an output that has only a few analog levels.

This paper investigates the subcarrier and power allocation for the downlink of a multicarrier non-orthogonal multiple access (MC-NOMA) system.