The doping of Zn (p-type) in GaAs and Al(0.35)Ga(-.65)As and that of Se (n-type in Al(0.35)Ga(0.65)As grown by the metal organic chemical vapor deposition method is studied.
The doping characteristics of S in the metalorganic vapor phase epitaxial growth of InP and GaInAs are studied using 3 different but consistent methods of determining the doping level in the crysta
VOR stands for "VHF Omnirange" a term used to describe a system of navigation using very-high-frequency omnidirectional radio beacons for determining the course of an aircraft.
We numerically investigate simulation conditions to accurately emulate the impact of four-wave mixing in 10Gbit/s systems based on low-dispersion fibre, such as the statistical impact of phase/time
Transient enhanced diffusion of dopants in silicon is frequently modeled using the ``+ 1{''} approximation of implantation damage.
We present a detailed study of double barrier strained Al(0.35)Ga(0.65)As/AlAs/GaAs/In(0.2)Ga(0.8)As quantum well infrared photodetectors on GaAs substrate.
Interpolative digital to analog converters generate an output that has only a few analog levels.
This paper investigates the subcarrier and power allocation for the downlink of a multicarrier non-orthogonal multiple access (MC-NOMA) system.
The continuously growing demand for wireless connectivity has turned bandwidth into a scarce resource that should be carefully managed.
The growing demand for wireless connectivity has turned bandwidth into a scarce resource that has to be carefully managed and fairly distributed to users.
