The photoluminescence (PL) spectrum of modulation-doped GaAs/AlGaAs quantum wells and heterojunctions (HJ) is studied under a magnetic field (B-parallel to) applied parallel to the two-dimensional
The high-T sub c superconductor Ba sub 2 YCuO sub (7-delta) is observed to undergo demixing in the presence of an oxygen gradient.
The physical origin of the crosshatch electrical activity in relaxed GeSi films was studied using a near-field scanning optical microscope (NSOM).
The scaling theory of localization in disordered electronic systems is generalized to include anisotropy of the fermi surface as well as an independent scattering anisotropy.
In this paper, we analyze the behavior of a multiple element antenna system in an indoor environment based on the measurements taken in the Lucent Bell Labs building in Crawford Hill, NJ, with a sy
As the base station is usually placed above local clutter, the angular spectrum incident on the base is narrow, inducing correlation among base antenna signals, which reduces the capacity of a mult
As the base station is usually placed above local clutter, the angular spectrum therein is narrow, inducing correlation among base antenna signals, which reduces the capacity of a multiple transmit
We report growth of ultra pure GaAs by molecular beam epitaxy (MBE) and show that the arsenic source has a dramatic effect on the purity.
HE data given in this paper show the effect of successive equilibrium humidity cycles on the relation between (a) relative humidity and moisture content; (b) insulation resistance and relative humi
High resolution electron microscopy has been used to determine the atomic structure at the epitaxial CaF sub 2/Si(111) interface before and after a rapid thermal anneal.
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