Publications

Due to the increased circuit current densities and temperatuers, interconnect reliability continues to be one of the major reliability concerns with the progress of device scaling.

Early electromigration failure has been recognized as a generic phenomenon in W-plug via structures.

Interchannel cross-phase-modulation-induced polarization scattering (XPMIPS) and its effect on the performance of optical polarization mode dispersion (PMD) compensation in wavelength-division-mult

A dramatic dependence on crystal stoichiometry has been observed for the donor activation of low doses of Si ions implanted into undoped semi-insulating GaAs.

Stability of sub-micron contacts under high current density has been an outstanding reliability issue in advanced Si devices.

Stability of submicron contacts under high current density has been an outstanding reliability issue in advanced Si devices.

We study the effect of dc current on microwave photoresistance in a high-mobility two-dimensional electron system.

The results of theoretical investigation of the effect of deposition conditions on the morphological properties of nanowhiskers (nanowires) in different growth technologies are presented.

Consider t h e coupled line equations / · ' ( * ) = - IVo(z) +jc(z)h(z) /,'(«) = jc(z)I0(z) - TMz).

A low-temperature, uniform, high-density plasma is produced by applying ultra-high-frequency (UHF) power through a spokewise antenna. The plasma is uniform within +-5% over a diameter of 30 cm.