Publications

For a semiconductor laser oscillating in a single longitudinal mode, the reflection feedback from the far end of an optical fiber generates closely spaced side modes corresponding to the external-c

The effect of frequency chirping on the performance of optical communication systems is analyzed theoretically using a simple but realistic model for the chirped pulses emitted by a directly modula

The mode gain in semiconductor lasers decreases with an increase in power due to nonlinear processes such as spectral hole burning.

N account of the irregular a n d heterogeneous character of the m a j o r portion of the earth's surface a n d the consequent difficulty in choosing a c o n d u c t i v i t y to be used in a c o m

The growth atmosphere over a PbO fluxed melt can significantly affect the platinum and lead concentrations and the magnetic properties of rare-earth iron garnet films grown from that melt.

A 1.4micron thick InGaAs layer exhibiting an x-ray diffraction linewidth of 18 arc s has been grown on an InP substrate.

The impact of the Ga/N ratio on the structure and electrical activity of threading dislocations in GaN films grown by molecular-beam epitaxy is reported.

Plan-view transmission electron microscopy was used to study the core structures of different dislocations in (0001) GaN layers grown under Ga-rich and Ga-lean conditions by molecular beam epitaxy.

Excess Ga is found at the surface termination of pure screw dislocations in GaN films grown by molecular beam epitaxy (MBE) under Ga-rich conditions.

We show that guiding filters fundamentally alter the behavior of dispersion-managed solitons by making the pulse energy nearly independent of path-average dispersion (D bar) in the neighborhood of