The mode gain in semiconductor lasers decreases with an increase in power due to nonlinear processes such as spectral hole burning.
N account of the irregular a n d heterogeneous character of the m a j o r portion of the earth's surface a n d the consequent difficulty in choosing a c o n d u c t i v i t y to be used in a c o m
The growth atmosphere over a PbO fluxed melt can significantly affect the platinum and lead concentrations and the magnetic properties of rare-earth iron garnet films grown from that melt.
A 1.4micron thick InGaAs layer exhibiting an x-ray diffraction linewidth of 18 arc s has been grown on an InP substrate.
The impact of the Ga/N ratio on the structure and electrical activity of threading dislocations in GaN films grown by molecular-beam epitaxy is reported.
Plan-view transmission electron microscopy was used to study the core structures of different dislocations in (0001) GaN layers grown under Ga-rich and Ga-lean conditions by molecular beam epitaxy.
Excess Ga is found at the surface termination of pure screw dislocations in GaN films grown by molecular beam epitaxy (MBE) under Ga-rich conditions.
We show that guiding filters fundamentally alter the behavior of dispersion-managed solitons by making the pulse energy nearly independent of path-average dispersion (D bar) in the neighborhood of
In this memo we present some results on the inversion layer mobility for our NMOS devices. Our devices do not follow the universal mobility curve reported by Clemens and Sabnis.
The efficiency, duration and spectral content of the emission from laser-produced Ta plasmas in the 10 - 71 nm spectral region have been measured for laser pulse durations ranging from 100 fsec to
