The degradation behaviour of two InGaAs/AlGaAs laser structures differing only in the Zn doping concentration of the p(+) GaAs contact layer has been compared.
A P R E V I O U S article 1 gives an analysis of single sideband transmission.
The Manufacturing Automation Protocol (MAP), which is based on the seven layer OSI/ISO communications model, specifies the LAN protocol to be the IEEE 802.4 Token Bus standard (the timed token sche
Solder joint fatigue life is commonly determined through accelerated tests by subjecting electronic assemblies to temperature cycling.
The goal of the timing adjust algorithm in UMTS networks is to adjust the arrival times of downlink frames from RNC to the Node B so that the frames arrive within a predefined time window before th
The presence of a small amount of Mo was shown to have a significant effect on the C49-TiSi sub 2 to C54-TiSi sub 2 phase transformation in the Ti-Si reaction.
The presence of a small amount of Mo was shown to have a significant effect on the C49-TiSi2 to C54-TiSi2 phase transformation in the Ti-Si reaction.
The effects of vortex generators (VG's) on fluid flow and heat transfer have been studied extensively in the literature.
The reflection (R) and photoluminescence (PL) spectra of several GaAs/Al(x)Ga(1-x)As modulation-doped quantum wells (MDQWs) were studied at T=2 K.
Five process factors are varied to find conditions necessary for alpha and beta phase formation in tantalum thin films deposited on SiC.
