The impact of the Ga/N ratio on the structure and electrical activity of threading dislocations in GaN films grown by molecular-beam epitaxy is reported.
Plan-view transmission electron microscopy was used to study the core structures of different dislocations in (0001) GaN layers grown under Ga-rich and Ga-lean conditions by molecular beam epitaxy.
Excess Ga is found at the surface termination of pure screw dislocations in GaN films grown by molecular beam epitaxy (MBE) under Ga-rich conditions.
We show that guiding filters fundamentally alter the behavior of dispersion-managed solitons by making the pulse energy nearly independent of path-average dispersion (D bar) in the neighborhood of
In this memo we present some results on the inversion layer mobility for our NMOS devices. Our devices do not follow the universal mobility curve reported by Clemens and Sabnis.
The efficiency, duration and spectral content of the emission from laser-produced Ta plasmas in the 10 - 71 nm spectral region have been measured for laser pulse durations ranging from 100 fsec to
The effect of pressure on the Raman spectrum of Scheelite Structure Compounds PbMoO4 and PbWO4 has been investigated, using a diamond anvil cell.
The pressure dependence of the vibrational modes in ZnP(2) has been investigated by Raman Spectroscopy using a diamond anvil cell, up to 150 kbar pressure.
This study evaluates the impact of typical cooling hole shape variations on the thermal performance of fan-shaped film holes.
Small-angle neutron scattering studies have been performed on a series of blends containing hydrogenated butadiene (hPB) homopolymer dispersed in a matrix of styrene-hPB-styrene triblock copolymer.
