Oxide, as ZrO sub 2, was quantitatively substituted into a ZBLAN (53ZrF sub 4-20 BaF sub 2-3.5LaF sub 3-3.5 AlF sub 3-20NaF) glass in the range 0-5000 ppm.
The electrical resistivity of polycrystalline YBa sub 2 Cu sub 3 O sub (7-delta) between room temperature and 900C was measured as a function of oxygen partial pressure and correlated with stoichio
In this letter, we report on electrical and microstructural properties of ultrathin zirconia dielectrics grown on SiO2 by ultraviolet (UV) ozone oxidation and natural oxidation (no UV light).
Upper valence (d sup 10-s sup 0) p-block materials were quantitatively added or substituted into a ZBLAN (53Zr sub 2 - 3.5 LaF sub 3 - 3.5 AlF sub 3 - 20 NaF) glass.
Upper valence (d sup 10-s sup 0) p-block materials have been added or substituted into a ZrF sub 4-BaF sub 2-LaF sub 3-AlF sub 3-NaF (ZBLAN) glass.
The effect of p-doping on both temperature and dynamic performances of 1.55mum Quantum Dashes lasers is investigated in detail.
The temperature dependence of differential gain dG/dn for 1.3-mu m InGaAsP-InP FP and DFB lasers with two profiles of p-doping was obtained from RIN measurements within the temperature range of 25
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We present a novel spectroscopic diagnostic which provides a detailed picture of a radio frequency discharge's response to photodetachment of electrons from negative ions.
In a piezoelectric material, strain gives rise to internally generated polarization fields. These electric fields modify the band structure and optical properties of the material.