Conductance measurements are reported for quantum dots fabricted by pattern-dependent oxidation in silicon; the small size of these devices allows observation of single electron behavior to tempera
We report inelastic light scattering measurements of spin and charge excitations in nanofabricated AlGaAs/GaAs quantum dots with few electrons.
Ultra-low density 2D electron systems are probed by inelastic light scattering at wavevectors large enough for both correlation and non-local effects to be significant.
Ultralow density two-dimensional electron systems are probed by inelastic light scattering at wave vectors large enough for both correlation and nonlocal effects to be significant.
Gain modulation in km-long lasers is experimentally demonstrated and explained.
Gain modulation in km-long lasers is experimentally demonstrated and explained. 1. Introduction A new kind of laser raises much attention for a few years.
Manifestations of interlayer excitonic coherence in a quantum Hall bilayer with negligible tunneling occur in low-lying spin excitations measured by inelastic light scattering.
Excitation modes in the range 1/3 (= <) v(=<) 2/5 of the fractional quantum Hall regime are observed by resonant inelastic light scattering.
The observed Raman spectra for single crystals of rubrene and tetracene are compared with the calculated spectra for the isolated molecules.
This paper presents low frequency noise (LF) measurements on InP/GaAsSb/InP HBTs.
