A comprehensive experimental study of the photoluminescence (PL) spectral evolution under a magnetic field (B = 25 T) applied perpendicularly to a high-mobility two-dimensional electron gas (2DEG),
T-shaped GaAs quantum-wire lasers were measured to study origin of laser gain and the exciton Mott transition in one dimension.
We perform time integrated degenerate four-wave mixing (DFWM) measurements to investigate exciton dephasing in a GaAs/A1As lateral superlattice (LSL) with a tunable band gap modulation.
We investigated the evolution of photoluminescence (PL) spectra with the electron-hole (e-h) pair density in a single T-shaped quantum wire of high quality grown by a cleaved-edge overgrowth method
We study excitonic states in the presence of applied electric field in 8-nm GaAs coupled quantum wells (QW's) separated by a 4-nm Al0.33Ga0.67As barrier and in 6-nm In0.1Ga0.9As coupled QW's separa
The quantum confined Pockels effect results from the combination of the genuine interface roto-inversion asymmetry and the breakdown of quantum well inversion symmetry due to the applied electric f
The confinement of electron-hole pairs in ultrathin semiconductor layers produces quantum size effects that modify drastically the excitonic behavior as compared to that of the bulk parent material
Exciton saturation adversely limits the switching speed of GaAs/Al sub x Ga sub (1-x) As quantum well electroabsorptive optical modulators.
Inelastic light scattering from collective excitations has emerged as a powerful tool to explore novel ground states of quantum Hall liquids.
We present a study of the excitons in quantum wells of GaInAs grown on InP substrates.
