Publications

The 193 nm excimer laser is used to deposit InP thin films on several substrates, via photochemical decomposition of (CH3)3 and P(CH3)3 gas-phase precursors.

Projection-patterned deposition of Al is highly desirable for mass production applications in integrated circuit manufacture.

We report the growth of GaAs thin films by an excimer laser induced photodecomposition process.

The growth of polycrystalline GaAs thin films by laser introduced photodecomposition is reported. The process involves the mixture of gallium and arsenic metalorganic compounds.

We identify odd and even parity states and measure transient photomodulation spectra of Frenkel excitons in alpha-hexathiophene single crystals.

We have measured the temperature dependence of the fractional quantum Hall effect at filling factors v = 1/3, 2/3, and 2/5 in tetracene in order to determine the associated excitation gaps.

Simulation of the kinetic Alfven wave is performed using a 2-1/2 dimensional macroscale particle [magnetohydrodynamic (MHD) scale kinetic] simulation code.

Copyright © 1975, American Telephone and Telegraph Company. Printed in U.S.A. Excitation of Parabolic-Index Fibers With Incoherent Sources By D.

Communication by means of optical fibers requires that light energy can be coupled into the fiber in an efficient way.

Communications systems using light waves as the carrier of information need some means of signal processing at the end terminals and perhaps also at intermediate repeater points along the transmiss