We report the results of the growth by molecular beam epitaxy of GaN/AlxGa1-xN superlattice (SL) structures with single or double quantum wells and thick AlxGa1-xN or short-period SL barriers.
The growth of GaTlAs has been attempted by gas source molecular beam epitaxy using a variety of growth conditions.
Our understanding of structural and chemical factors crucial to the appearence of high temperature superconductivity has been furthered by the availability of large, high quality single crystals.
The high yield growth, fabrication, and characterization of reliable, high speed InP/InGaAsP distributed feedback (DFB) lasers is described.
The growth of InAs columnar quantum dots (CQDs) on GaAs substrates by molecular beam epitaxy was investigated.
As the diameter of GaAs substrates has increased, so has the difficulty and cost of growing GaAs by Liquid Encapsulated Czochralski (LEC).
The extended abstract summarizes recent progress on the synthesis of rare earth superlattices.
The growth of crystals of the new high T sub c oxides has been of critical importance in phase identification and in the determination of the intrinsic properties of these fascinating new materials
This paper reviews recent progress in understanding microstructural and growth-mechanistic aspects of ultrathin (4 nm) oxynitride films for gate dielectric applications.
In this letter, we report on the growth of ultrathin films of zirconia on silicon oxide and silicon oxynitride passivated (001) Si by ultraviolet ozone oxidation of Zr metal precursor layers.
