Recent efforts employing reflection high energy electron diffraction measurements to study the chemical beam epitaxial growth of GaAs using triethylgallium and arsine have resulted in a reaction mo
The clustering behaviour of the system Ge on Si has been investigated by ion scattering and electron microscopy.
Recent experiments on strip heater scan-melted silicon films over SiO2 have revealed the existence of two regimes of Si solidification separated by an abrupt discontinuity as the thermal gradient,
We have studied the growth dynamics and electronic properties of SrTiO3-delta homoepitaxial films by pulsed laser deposition.
Preferentially ^ above c axis oriented superconducting Bi-Sr-Ca-Cu oxide films as thin as 100angstroms have been successfully grown on MgO(100) substrates.
Strained layer superlattice with ultra thin, alternating InAs and GaAs layers have been grown on buffer layers lattice matched to InP.
We report the first successful growth of an epitaxial insulator- metal-semiconductor structure.
Superconductivity onsets in excess of 90K have been found in Ba sub 2 YCU sub 3 O sub 7 and a number of related cuprate perovskites.
For LPE growth of BiYIG films MoO3 is shown to be a flux modifier which increases Bi content, x(Bi), and growth-induced anisotropy, K(u)(g), for MoO3 flux concentrations up to 12 Mole% (M%).
Cd(1-x) Zn(x)Te has been grown on GaAs substrates for compositions from x=0 to x=1.
