The two major issues in the growth of a heterostructure are (1) the degree of perfection of the overlayer and (2) the sharpness of the interface.
Ga sub (x) In sub (1-x) As sub (y) P sub (1-y) epilayers closely lattice-matched, delta a/a 5 x 10 sup (-4), have been reproducibly grown over the whole range of composition (y=2.2x, 1>y>0)
A first study involving lateral growth of In(0.53)Ga(0.47) As by liquid phase epitaxy over tungsten metal is being reported.
The growth conditions to achieve high quality InAsSb alloy and abrupt InAsSb/GaSb heterostructure by molecular beam epitaxy are described.
Molecular beam epitaxy is the most widely currently-used technique for the growth of semiconductor microstructures.
Molecular beam epitaxy has revolutionized the fields of thin films by making possible the fabrication of new solid state materials and artificial superlattices, structures with grown-in periodiciti
The process of step-mediated growth in molecular beam epitaxy, where deposited atoms move along surface terraces until they eventually bind at a surface step, is currently being explored as a mech
This paper presents an alternative method based on the metal-organic chemical vapour deposition technique to obtain new nanowire structures.
The possibility of guiding a beam of light over a long distance through a series of lenses or a continuous lens-like medium has recently received considerable attention because such a system might
The growth of polysilicon sheets on a continuous carbon shaper using the RAD process is reported. The basic aspects of the RAD process and the characteristics of the carbon shaper are described.
