Single crystal epitaxial strained layer semiconductor-metal- semiconductor heterostructures have been grown for the first time.
Bragg gratings have been written in an H-2 loaded telecommunication fibre using a CW UV fringe pattern.
Progress in the elucidation of the intrinsic materials parameters and underlying physics of the new high temperature superconductors has depended on the study of single crystal samples.
Single crystals can be grown from the melt, from solution, from the vapor phase, and at high pressure. Technological uses of single crystals include silicon, gallium arsenide, etc.
The initial stages of the development of a Ge adatom layer on a clean Si(001)-(2 x 1) surface are consistent with random deposition and limited surface mobility.
The growth of high quality, thin (14-70 angstroms) epitaxial CoSi sub 2 layers on Si(100) substrates have been observed.
We demonstrate the necessary conditions for successful metalorganic vapor phase epitaxy (MOVPE) growth of InGaAs-InP-based heterojunction bipolar transistor (HBT) layers on p-i-n InGaAsP-InGaAsP qu
Growth over grating is an important process step in determining the performance of DFB lasers.
Investigations on epitaxial growth processes, both microscopic and macroscopic, in plasma-assisted molecular-beam epitaxy (P-MBE) of ZnO and (Mg,ZN,Cd)O alloys are discussed.
Layers of mercury telluride were grown on single crystal cadmium telluride substrates at temperatures ranging from about 45C to 145C using plasma enhanced chemical vapor deposition.
