The Czochralski growth technique was used to prepare crystals of gadolinium scandium gallium garnet.
The growth of high purity GaAs with excellent uniformity and very low defect density by chemical beam epitaxy using triethylgallium and arsine is described.
A procedure has been developed which allows the reproducible preservation and overgrowth by hydride vapor phase epitaxy of InP first order distributed feedback gratings for double heterostructure (
The formation of NiSi sub 2 and CoSi sub 2 from evaporated metal films on single crystal Si requires an anneal at high temperatures (750C for NiSi sub 2 and 550C for CoSi sub 2).
Epitaxial type B NiSi sub 2 thin layers have been grown at room temperature on Si(111).
Superconductive films of YbBa sub 2 Cu sub 3 O sub 7 have been epitaxially grown on SrTiO sub 3 substrate by a novel liquid-gas-solidification process.
We report preliminary results of the first MBE growth of GaAs films on evaporated metal films of CoSi sub 2 on Si(111) substrate.
This paper reports on the growth, structural and optical properties of GaN free-stranding nanowires synthesized in catalyst- free mode on Si( 111) substrate by plasma-assisted molecular beam epitax
GaN films are grown by plasma-assisted molecular beam epitaxy on 6H-SiC(0001) substrates.
Despite the immiscibility of bulk Ge and Sn, we have fabricated Ge sub x Sn sub 1-x (x>>0.01) semiconductor alloys using molecular beam epitaxy.
