With the aim of fabricating vertical cavity semiconductor lasers (VCSEL), the molecular beam epitaxy growth of GaAsSb using two different element-Si precursor sets has been first evaluated.
Superconducting thin films (0.04 to 1.0micron thick) of Bi- Sr-Ca-Cu-O compounds have been grown on both MgO(100) and SrTiO sub 3 (100) single crystal substrates using an rf magnetron sputtering te
We have grown bulk crystals of DPA and demonstrated by the TOF technique that these ultra-pure single crystals exhibit both electron and hole transport.
Pb(Zr0.53Ti0.47)O-3 (PZT) on diamond is a potentially robust structure for surface acoustic wave (SAW) device applications.
We report compositional dependencies of the 2d-3d growth mode transition for GaAsSb on GaAs.
Stacks of different quantum dot (QD) structures were adopted and characterized for broadband superluminescent diodes (SLDs).
MgxZn1-xO (00.33) thin films were grown on R-plane (01 (1) over bar2) sapphire substrate by metalorganic chemical vapor deposition.
The authors report on the growth of GaN by nitrogen plasma-assisted molecular beam epitaxy (MBE) on a 2 in.
Thin films of Ge(x)-Si(1-x) alloys for x=0.5 have been grown in ultra high vacuum on a Si(111)-(7x7) surface and examined using Auger electron spectroscopy and digital LEED.
Growth induced phason strains have been examined by x-ray diffraction in icosahedral quasicrystals of Al-Li-Cu produced by various growth techniques.
