Growth of In(0.53)Ga(0.47)As by LPE over tungsten on structured InP substrates.

A first study involving lateral growth of In(0.53)Ga(0.47) As by liquid phase epitaxy over tungsten metal is being reported. Because of the rapid lateral nucleation process in the channels etched on (111) B InP substrates, seeding of the crystal through the metal layer is found unnecessary, enabling growth to occur over relatively large areas of continuous metal. The tungsten metal during growth was found to remain undissolved in the growth solution, and also acted as a mask for vertical growth when used on a plane InP substrate. The Schottky barrier characteristics between the tungsten and the top InGaAs layer indicate that this structure will be useful for metal base transistors.