Publications

We demonstrate the necessary conditions for successful metalorganic vapor phase epitaxy (MOVPE) growth of InGaAs-InP-based heterojunction bipolar transistor (HBT) layers on p-i-n InGaAsP-InGaAsP qu

Growth over grating is an important process step in determining the performance of DFB lasers.

Investigations on epitaxial growth processes, both microscopic and macroscopic, in plasma-assisted molecular-beam epitaxy (P-MBE) of ZnO and (Mg,ZN,Cd)O alloys are discussed.

Layers of mercury telluride were grown on single crystal cadmium telluride substrates at temperatures ranging from about 45C to 145C using plasma enhanced chemical vapor deposition.

The relationships between traffic carried and traffic lost, between load and loss, have always been at the center of interest in telephone traffic theory.

Epitaxial growth of compound semiconductor materials suitable for heterostructure field-effect transistors is a demanding procedure.

The second-generation specification for Digital Video Broadcast over Satellite, DVB-S2, defines ail improved and adaptive physical layer.

An implementation of GSM EFR using traditional single MAC DSPs (DSP1600) takes 24 MIPS to run a single speech channel. Lucent DSP16000 is a dual MAC high performance DSP.

Currently data communications use is relatively low. However, in some areas the growth is increasing rapidly.

The GSMBE growth of GaInAsP/InP 1.3-μ m-TM active core and highly p-doped contacting layers required for fabricating an integrated optical waveguide isolator is studied in detail.