Publications

Strained layer superlattice with ultra thin, alternating InAs and GaAs layers have been grown on buffer layers lattice matched to InP.

We report the first successful growth of an epitaxial insulator- metal-semiconductor structure.

Superconductivity onsets in excess of 90K have been found in Ba sub 2 YCU sub 3 O sub 7 and a number of related cuprate perovskites.

For LPE growth of BiYIG films MoO3 is shown to be a flux modifier which increases Bi content, x(Bi), and growth-induced anisotropy, K(u)(g), for MoO3 flux concentrations up to 12 Mole% (M%).

Cd(1-x) Zn(x)Te has been grown on GaAs substrates for compositions from x=0 to x=1.

The Czochralski growth technique was used to prepare crystals of gadolinium scandium gallium garnet.

The growth of high purity GaAs with excellent uniformity and very low defect density by chemical beam epitaxy using triethylgallium and arsine is described.

A procedure has been developed which allows the reproducible preservation and overgrowth by hydride vapor phase epitaxy of InP first order distributed feedback gratings for double heterostructure (

The formation of NiSi sub 2 and CoSi sub 2 from evaporated metal films on single crystal Si requires an anneal at high temperatures (750C for NiSi sub 2 and 550C for CoSi sub 2).

Epitaxial type B NiSi sub 2 thin layers have been grown at room temperature on Si(111).