In this letter, we report on the growth of ultrathin films of zirconia on silicon oxide and silicon oxynitride passivated (001) Si by ultraviolet ozone oxidation of Zr metal precursor layers.
With the aim of fabricating vertical cavity semiconductor lasers (VCSEL), the molecular beam epitaxy growth of GaAsSb using two different element-Si precursor sets has been first evaluated.
Superconducting thin films (0.04 to 1.0micron thick) of Bi- Sr-Ca-Cu-O compounds have been grown on both MgO(100) and SrTiO sub 3 (100) single crystal substrates using an rf magnetron sputtering te
We have grown bulk crystals of DPA and demonstrated by the TOF technique that these ultra-pure single crystals exhibit both electron and hole transport.
Pb(Zr0.53Ti0.47)O-3 (PZT) on diamond is a potentially robust structure for surface acoustic wave (SAW) device applications.
We report compositional dependencies of the 2d-3d growth mode transition for GaAsSb on GaAs.
Stacks of different quantum dot (QD) structures were adopted and characterized for broadband superluminescent diodes (SLDs).
MgxZn1-xO (00.33) thin films were grown on R-plane (01 (1) over bar2) sapphire substrate by metalorganic chemical vapor deposition.
The authors report on the growth of GaN by nitrogen plasma-assisted molecular beam epitaxy (MBE) on a 2 in.
Thin films of Ge(x)-Si(1-x) alloys for x=0.5 have been grown in ultra high vacuum on a Si(111)-(7x7) surface and examined using Auger electron spectroscopy and digital LEED.
