Publications

The growth of InAs columnar quantum dots (CQDs) on GaAs substrates by molecular beam epitaxy was investigated.

As the diameter of GaAs substrates has increased, so has the difficulty and cost of growing GaAs by Liquid Encapsulated Czochralski (LEC).

The extended abstract summarizes recent progress on the synthesis of rare earth superlattices.

This paper reviews recent progress in understanding microstructural and growth-mechanistic aspects of ultrathin (4 nm) oxynitride films for gate dielectric applications.

In this letter, we report on the growth of ultrathin films of zirconia on silicon oxide and silicon oxynitride passivated (001) Si by ultraviolet ozone oxidation of Zr metal precursor layers.

With the aim of fabricating vertical cavity semiconductor lasers (VCSEL), the molecular beam epitaxy growth of GaAsSb using two different element-Si precursor sets has been first evaluated.

Superconducting thin films (0.04 to 1.0micron thick) of Bi- Sr-Ca-Cu-O compounds have been grown on both MgO(100) and SrTiO sub 3 (100) single crystal substrates using an rf magnetron sputtering te

We have grown bulk crystals of DPA and demonstrated by the TOF technique that these ultra-pure single crystals exhibit both electron and hole transport.

Pb(Zr0.53Ti0.47)O-3 (PZT) on diamond is a potentially robust structure for surface acoustic wave (SAW) device applications.

We report compositional dependencies of the 2d-3d growth mode transition for GaAsSb on GaAs.