Publications

Stacks of different quantum dot (QD) structures were adopted and characterized for broadband superluminescent diodes (SLDs).

MgxZn1-xO (00.33) thin films were grown on R-plane (01 (1) over bar2) sapphire substrate by metalorganic chemical vapor deposition.

The authors report on the growth of GaN by nitrogen plasma-assisted molecular beam epitaxy (MBE) on a 2 in.

Thin films of Ge(x)-Si(1-x) alloys for x=0.5 have been grown in ultra high vacuum on a Si(111)-(7x7) surface and examined using Auger electron spectroscopy and digital LEED.

Growth induced phason strains have been examined by x-ray diffraction in icosahedral quasicrystals of Al-Li-Cu produced by various growth techniques.

Recent efforts employing reflection high energy electron diffraction measurements to study the chemical beam epitaxial growth of GaAs using triethylgallium and arsine have resulted in a reaction mo

The clustering behaviour of the system Ge on Si has been investigated by ion scattering and electron microscopy.

Recent experiments on strip heater scan-melted silicon films over SiO2 have revealed the existence of two regimes of Si solidification separated by an abrupt discontinuity as the thermal gradient,

We have studied the growth dynamics and electronic properties of SrTiO3-delta homoepitaxial films by pulsed laser deposition.

Preferentially ^ above c axis oriented superconducting Bi-Sr-Ca-Cu oxide films as thin as 100angstroms have been successfully grown on MgO(100) substrates.