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The process of step-mediated growth in molecular beam epitaxy, where deposited atoms move along surface terraces until they eventually bind at a surface step, is currently being explored as a mech

This paper presents an alternative method based on the metal-organic chemical vapour deposition technique to obtain new nanowire structures.

The possibility of guiding a beam of light over a long distance through a series of lenses or a continuous lens-like medium has recently received considerable attention because such a system might

The growth of polysilicon sheets on a continuous carbon shaper using the RAD process is reported. The basic aspects of the RAD process and the characteristics of the carbon shaper are described.

A flux process, employing molten tungstic anhydride, has been used to grow single crystals of the nonlinear optical material potassium titanyl phosphate.

With the newly developed metal MBE technique, high quality rare-earth (RE) single-crystal films of yttrium (Y) and gadolinium (Gd) were successfully grown on a bcc Nb single crystal film which serv

Rapid thermal chemical vapor deposition (RTCVD) is a thin film growth process that results from the combination of radiant heating lamps and a chemical vapor deposition chamber.

This paper describes the RAD growth process which has been conceived in order to achieve silicon sheets for terrestrial photovoltaics.

Growth of single crystal nickel silicide layers on Si(110) under ultrahigh vacuum (UHV) conditions is demonstrated.

Crystals of cuprate-based superconductors, important for measurements of physical properties as a function of crystallographic orientation and measurements free of grain boundary effects, have bee

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