Publications

This is an invited article for the American Association of Crystal Growth Newsletter and is intended to provide an overview of the field of high temperature superconductivity with special emphasis

The RTa sub 3 O sub 9 compounds offer the crystal structure and lattice parameters which could serve as the substrate for thin film epitaxial growth of several of the oxide superconducting material

The compound, ZrW sub 2 O sub 8, exhibits an unusual negative coefficient of thermal expansion of approximately -10 ppm/C over ambient temperatures.

Bulk single crystals of neodymium iron garnet and praseodymium iron garnet were prepared for the first time by low temperature liquid phase epitaxy on Sm(3)(ScGa)(5)O(12) seeds with nearly matching

Single crystal epitaxial strained layer semiconductor-metal- semiconductor heterostructures have been grown for the first time.

Bragg gratings have been written in an H-2 loaded telecommunication fibre using a CW UV fringe pattern.

Progress in the elucidation of the intrinsic materials parameters and underlying physics of the new high temperature superconductors has depended on the study of single crystal samples.

Single crystals can be grown from the melt, from solution, from the vapor phase, and at high pressure. Technological uses of single crystals include silicon, gallium arsenide, etc.

The initial stages of the development of a Ge adatom layer on a clean Si(001)-(2 x 1) surface are consistent with random deposition and limited surface mobility.

The growth of high quality, thin (14-70 angstroms) epitaxial CoSi sub 2 layers on Si(100) substrates have been observed.