Publications

Superconductive films of YbBa sub 2 Cu sub 3 O sub 7 have been epitaxially grown on SrTiO sub 3 substrate by a novel liquid-gas-solidification process.

We report preliminary results of the first MBE growth of GaAs films on evaporated metal films of CoSi sub 2 on Si(111) substrate.

This paper reports on the growth, structural and optical properties of GaN free-stranding nanowires synthesized in catalyst- free mode on Si( 111) substrate by plasma-assisted molecular beam epitax

GaN films are grown by plasma-assisted molecular beam epitaxy on 6H-SiC(0001) substrates.

Despite the immiscibility of bulk Ge and Sn, we have fabricated Ge sub x Sn sub 1-x (x>>0.01) semiconductor alloys using molecular beam epitaxy.

The two major issues in the growth of a heterostructure are (1) the degree of perfection of the overlayer and (2) the sharpness of the interface.

Ga sub (x) In sub (1-x) As sub (y) P sub (1-y) epilayers closely lattice-matched, delta a/a 5 x 10 sup (-4), have been reproducibly grown over the whole range of composition (y=2.2x, 1>y>0)

A first study involving lateral growth of In(0.53)Ga(0.47) As by liquid phase epitaxy over tungsten metal is being reported.

The growth conditions to achieve high quality InAsSb alloy and abrupt InAsSb/GaSb heterostructure by molecular beam epitaxy are described.

Molecular beam epitaxy is the most widely currently-used technique for the growth of semiconductor microstructures.