Despite the immiscibility of bulk Ge and Sn, we have fabricated Ge sub x Sn sub 1-x (x>>0.01) semiconductor alloys using molecular beam epitaxy.
The two major issues in the growth of a heterostructure are (1) the degree of perfection of the overlayer and (2) the sharpness of the interface.
Ga sub (x) In sub (1-x) As sub (y) P sub (1-y) epilayers closely lattice-matched, delta a/a 5 x 10 sup (-4), have been reproducibly grown over the whole range of composition (y=2.2x, 1>y>0)
A first study involving lateral growth of In(0.53)Ga(0.47) As by liquid phase epitaxy over tungsten metal is being reported.
The growth conditions to achieve high quality InAsSb alloy and abrupt InAsSb/GaSb heterostructure by molecular beam epitaxy are described.
Molecular beam epitaxy is the most widely currently-used technique for the growth of semiconductor microstructures.
The process of step-mediated growth in molecular beam epitaxy, where deposited atoms move along surface terraces until they eventually bind at a surface step, is currently being explored as a mech
This paper presents an alternative method based on the metal-organic chemical vapour deposition technique to obtain new nanowire structures.
The possibility of guiding a beam of light over a long distance through a series of lenses or a continuous lens-like medium has recently received considerable attention because such a system might
The growth of polysilicon sheets on a continuous carbon shaper using the RAD process is reported. The basic aspects of the RAD process and the characteristics of the carbon shaper are described.
