The growth of epitaxial insulators on semiconductors in general and on Si in particular is an area of research which has developed quickly over the last five years.
We report the results of studies which have been made on heteroepitaxial layers of GaAs and AlGaAs grown by metalorganic chemical vapor deposition on composite substrates that consist of four diffe
We report the results of the growth by molecular beam epitaxy of GaN/AlxGa1-xN superlattice (SL) structures with single or double quantum wells and thick AlxGa1-xN or short-period SL barriers.
The growth of GaTlAs has been attempted by gas source molecular beam epitaxy using a variety of growth conditions.
Our understanding of structural and chemical factors crucial to the appearence of high temperature superconductivity has been furthered by the availability of large, high quality single crystals.
The high yield growth, fabrication, and characterization of reliable, high speed InP/InGaAsP distributed feedback (DFB) lasers is described.
The growth of InAs columnar quantum dots (CQDs) on GaAs substrates by molecular beam epitaxy was investigated.
As the diameter of GaAs substrates has increased, so has the difficulty and cost of growing GaAs by Liquid Encapsulated Czochralski (LEC).
The extended abstract summarizes recent progress on the synthesis of rare earth superlattices.
This paper reviews recent progress in understanding microstructural and growth-mechanistic aspects of ultrathin (4 nm) oxynitride films for gate dielectric applications.
