Publications

The capability of chemical beam epitaxy (CBE) to grow very high quality III-V semiconductor epilayers with superior compositional and lateral uniformity has been demonstrated in recent years.

Synthesis and growth of large Al(x)CuLi(y) quasicrystals by Bridgman techniques will be described.

The alloy system Al-Li-Cu was investigated extensively over the composition range 5.8-8 Al-Cu-3Li to develop a detailed understanding of the formation and properties of the icosahedral phase, know

We report the results of a study of a 25angstroms film of Co deposited on Si(311) at near room temperature and reacted at 500C.

The growth of epitaxial insulators on semiconductors in general and on Si in particular is an area of research which has developed quickly over the last five years.

We report the results of studies which have been made on heteroepitaxial layers of GaAs and AlGaAs grown by metalorganic chemical vapor deposition on composite substrates that consist of four diffe

We report the results of the growth by molecular beam epitaxy of GaN/AlxGa1-xN superlattice (SL) structures with single or double quantum wells and thick AlxGa1-xN or short-period SL barriers.

The growth of GaTlAs has been attempted by gas source molecular beam epitaxy using a variety of growth conditions.

Our understanding of structural and chemical factors crucial to the appearence of high temperature superconductivity has been furthered by the availability of large, high quality single crystals.

The high yield growth, fabrication, and characterization of reliable, high speed InP/InGaAsP distributed feedback (DFB) lasers is described.