Inelastic He scattering has shown significant promise as a high resolution measure of the vibrational spectra of surfaces.
We report an inelastic light scattering study of long wavelength collective gap excitations of fractional quantum Hall (FQH) states at nu = p over 2p+1 for 1/3 = nu = 2/3.
During the last six years there has been much research on inelastic light scattering by quasi 2D electron systems in quantum wells and heterostructures.
We report observations of collective gap excitations of the fractional quantum Hall (FQH) states at filling factors nu = p/(2p + 1) (p = integer), for 1/3 less than or equal to nu less than or equa
The low-dimensional electron systems that reside in artificial semiconductor heterostructures of great perfection are a contemporary materials base for explorations of collective phenomena.
We report low temperature inelastic light scattering obtained with photon energies in resonance with the fundamental absorption edge of modulation doped GaAs-(Al0.3Ga0.7)As multiple quantum wells.
The inelastic light scattering method has been used extensively to study collective excitations of low dimensional electron systems in semiconductor quantum structures.
We review recent resonant inelastic light scattering research carried out in modulation doped GaAs-(AlGa)As quantum well heterostructures.
The magnetic properties of the 2DES close to nu = 1 are studied by the direct measurement of the low-lying spin excitation spectrum by inelastic light scattering at sub-Kelvin temperatures.
We have measured the ground heavy-hole to first excited heavy- hole valence intersubband transition in GaAs-AlGaAs multiple quantum wells using resonant inelastic light scattering.
