A double heterostructure ridge waveguide with multiple quantum well InGaAs/InP core and InP cladding layers has been operated as a phase modulator at 1.52micron wavelength.
The chemistry of trichloride vapor phase epitaxy lends itself to the growth of ultra-high purity InGaAsP heterostructures.
Two types of mesa-type InGaAs/InP p-i-n photodiodes have been fabricated from wafers grown by chemical beam epitaxy (CBE): (1) a conventional diffused InGaAs homojunction and (2) a novel InP/InGaAs
InGaAs/InP heterostructure p-i-n photodiodes and two types of InGaAs/InP avalanche photodetectors have been fabricated from structures grown by atmospheric-pressure metalorganic chemical vapor depo
An InGaAs/InP pseudo-heterojunction bipolar transistor (PHBT) with a thin emitter barrier is demonstrated.
Preparation and performance of separate avalanche and multiplication superlattice photodiodes is reported.
The photoluminescence characteristics of a 1.3micron not intentionally doped n-type InGaAsP grown lattice matched by liquid phase epitaxy in the V-grooves of a channeled InP substrate are compared
The fabrication and performance characteristics of an independently controllable closely spaced dual wavelength laser structure are described.
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The fabrication and performance characteristics of 1.3micron InGaAsP distributed feedback (DFB) lasers with multiquantum well (MQW) active layers are reported.
