Publications

The reverse bias leakage current in macroscopic GaN Schottky diodes is found to be insensitive to barrier height.

Growth of the first few layers of an oxide mixture Ga2O3(Gd2O3) on GaAs (100) substrate, electron-beam evaporated from a Ga(5)Go(3)O(12) source, was found to be a single crystal.

After excitation by a subpicosecond pulse, we observe a very slow rise of the luminescence both in GaAs and GaAs quantum well.

A particle scoop limiter with a graphite face backed by a 50 liter volume for collecting particles was used in PDX.

We report on investigations of the formation of the first layers of GaAs grown by molecular beam epitaxy on clean Si(111) substrates.

The initial stages of interface formation between an ultrathin layer of Sn and the Ge(100)c2X4 and Ge(111) c2X8 surfaces are studied under atomically clean conditions in ultra-high vacuum.

Group IV-IV heterostructures with Sn as one constituent have potentially important applications We report on an investigation of the initial stages of interface formation for deposition of Sn on S

The initial stages of interface formation are crucial for the growth of an overlayer, in particular for ultra-thin films.

High energy ion scattering/channeling and low energy electron diffraction is used to investigate quantitatively the initial stages of interface formation (overlayer thickness up to ~10angstroms) du

A high-throughput SCALPEL tool will employ a typical current of 30 mu A and electron column potential of 100 KV, delivering power up to ~3 W through a 0.25 mm (wafer scale) square optical subfield.