The fabrication and performance characteristics of a dual wavelength laser emitting near 1.3microns and 1.55microns are described.
The light emitted from the facet of a semiconductor laser diverges due to diffraction, and this limits the coupling efficiency of the light into a single mode fiber.
The fabrication and performance characteristics of a InGaAsP laser structure with a semi-insulating current confining layer are reported.
The present generation of optical transmission systems employs GaAlAs laser emitters operating at 0.8 to 0.9 jum.1 In this wavelength range fiber attenuation (about 4 dB/km) and especially chromati
Fabrication and performance of ridge waveguide distributed feedback lasers grown by liquid phase epitaxy for operation in the 1.50-1.58micron spectral region have been studied.
The fabrication and performance characteristics of InGaAsP (lambda ~ 1.3micron) ridge waveguide laser arrays are described.
A new long wavelength p-i-n photodetector, consisting of an In0.53 Ga0.47 As absorbing layer and an adjacent InGaAsP p-n junction is demonstrated.
We report that a significant improvement in the performance of InGaAsP (—=1.3 —m) crescent lasers is obtained by introducing InGaAsP (—=1.1 —m) cladding layers on both sides of the active layer.
Room-temperature operation of InGaAsP-InP double-heterostructure lasers grown by atmospheric pressure metalorganic chemical vapor deposition is reported.
We review the operation, performance and potential applications of the InGaAsP/InP waveguide grating-assisted vertical coupler filter.
