Publications

The fabrication and performance characteristics of InGaAsP (lambda ~ 1.3micron) ridge waveguide laser arrays are described.

A new long wavelength p-i-n photodetector, consisting of an In0.53 Ga0.47 As absorbing layer and an adjacent InGaAsP p-n junction is demonstrated.

We report that a significant improvement in the performance of InGaAsP (—=1.3 —m) crescent lasers is obtained by introducing InGaAsP (—=1.1 —m) cladding layers on both sides of the active layer.

Room-temperature operation of InGaAsP-InP double-heterostructure lasers grown by atmospheric pressure metalorganic chemical vapor deposition is reported.

We review the operation, performance and potential applications of the InGaAsP/InP waveguide grating-assisted vertical coupler filter.

High-power semi-insulating blocked planar buried-heterostructure (SIPBH) lasers were grown entirely by atmospheric organometallic vapor phase epitaxy (OMVPE) by using a novel dilution scheme for th

We describe InGaAsP inverted rib waveguide lasers emitting at 1.54 microns with pulsed current thresholds as low as 60 mA, external quantum efficiencies of up to 0.2 per facet, and emitting 16 mW i

We describe the fabrication and performance of the first integrated heterodyne receiver capable of actual heterodyne data reception.

The quantum confined Stark effect has been studied in InGaAsP/InP rib waveguide structures grown by gas source molecular beam epitaxy.

We have made InGaP clad InP waveguides on InP substrates by atmospheric pressure Metal Organic Vapor Phase Epitaxy (MOVPE).