While InGaAs absorption material has been used for various applications up to 1.6microns wavelength, specific designs for low level detection have become of main interest using high responsivity an
The Vapor Levitation Epitaxy (VLE) system utilizes quartz frits directly in front of the growth surface of the substrate.
This paper reviews trends in InGaAs based communication photodetectors design.
An overview is given on scientific and device advances for InGaAs metal oxide semiconductor heterostructures and inversion channel metal oxide semiconductor field-effect transistors (MOSFETs), with
An InGaAs Metal/Semiconductor/Metal (MSM) photodetector with a dark current less than 1 mu A is described.
We have fabricated and characterized high-efficiency, long- wavelength PIN photodiodes on In0.53Ga0.47As/InP/GaAs wafers grown by metal organic vapor phase epitaxy.
We compare two uni-traveling-carrier photodiodes for high power applications.
We report, for the first time, intersubband absorption experiments in doped InGaAs/InAlAs multiquantum well superlattices and observe a resonance peak at a wavelength of lambda = 4.4microns which i
InGaAs/InP double heterostructure bipolar transistors with current gain beta ~ 630 have been realized using gas-source molecular beam epitaxy.
We demonstrate a voltage-tunable distributed Bragg reflector grown by chemical beam epitaxy that utilizes 31 periods of alternating InGaAs/InP multiple quantum well and bulk InP quarter-wave layers
