A scheme for infrared generation without population inversion between subbands in quantum-well and quantum-dot lasers is presented.
During the processing of STIC wafers, the tantalum nitride is etched in a CF4 plasma. The underlying silicon nitride is briefly exposed to the plasma at the end of the tantalum nitride etch.
Mixtures of the gauche and trans-1-Halogenopropanes are trapped in rare gas solids at 4K and interconverted by infrared irradiation.
Infrared spectroscopy is widely used to measure the concentration of interstitial oxygen impurities in silicon.
The infrared properties of silica fibre and preform samples doped with up to about 10 wt% phosphorus concentration have been studied.
The FT-infrared spectra of two sexithiophenes having their end alpha,alpha'-positions substituted by it-hexyl or -thiohexyl groups, in neutral and doped states, are studied with the main aim of der
The nature of the silicon oxide transition region in the vicinity of the Si/SiO2 interface is probed by infrared and x-ray photoelectron spectroscopies.
Films of Si sub 3 N sub 4 on Si substrates were prepared by both sputtering and low pressure chemical vapor deposition.
This paper continues the investigation into the ethylene-vinyl chloride copolymers prepared by partial reduction of poly(vinyl chloride).
We report infrared studies of the Landau level (LL) transitions in single layer graphene. Our specimens are density tunable and show in situ half-integer quantum Hall plateaus.
