Various mixed-signal very-high-speed integrated circuits have been developed using InP DHBTs. These circuits have been designed for fiber-optic 43 Gbit/s transmissions applications.
Indium Phosphide (InP) Double Hetero-junction Bipolar Transistor (DHBT) technology is characterized by high cut-off frequencies and large breakdown voltages.
Various mixed signal ASICs have been designed to address 40 Gb/s optical transmission experiment needs, and realized specific research transmitters.
This paper reports on very high speed large swing drivers suitable for the generation of high symbol rate spectrally efficient optical transmission signals.
An integrated selector-driver is designed for 100 Gbit/s operation and fabricated using 0.7 mum InP double-heterojunction bipolar transistor (DHBT) technology.
An optimized InP Double Heterojunction Bipolar Transistor (DHBT) technology is presented for millimeter-wave power amplifiers at E-band and higher frequencies.
We report the design and measurement of a 1:2 demultiplexer (DMUX) integrated circuit (IC) including a transimpedance amplifier (TIA) as input stage for best input sensitivity and automatic single-
We present the design, fabrication and measurement of two transimpedance amplifiers with single-ended input and differential output for optical fibre communication systems.
This paper reports on very high speed large swing digital-to-analog converter (DAC) suiting the generation of spectrally efficient optical transmission signals.
We evaluate the optical performance of the InP heterojunction bipolar transistors (DHBTs) designed for 100 Gbit/s circuit applications as a room temperature detector operating above 1 THz.
