Publications

The combination of device speed (fT, fmax>150 GHz) and breakdown voltage (Vbcco of about 10 V), makes the double heterojunction InP-based HBT (D-HBT), a very attractive technology to implement t

The combination of device speed (fT, fmax > 150 GHz) and breakdown voltage (Vbceo > 8 V) makes the double heterojunction bipolar InP-based transistor (D-HBT) an attractive technology to imple

We report on-wafer characterization results up to 500 GHz on a 0.4×5 ?m² InP/InGaAs DHBT.

We present key high-speed analog circuits and digital building blocks realized in our 0.5 um InP DHBT technology.

In this paper, a D-band stacked power amplifier in a 0.7-µm InP DHBT technology is reported.

Various mixed-signal very-high-speed integrated circuits have been developed using InP DHBTs. These circuits have been designed for fiber-optic 43 Gbit/s transmissions applications.

Indium Phosphide (InP) Double Hetero-junction Bipolar Transistor (DHBT) technology is characterized by high cut-off frequencies and large breakdown voltages.

Various mixed signal ASICs have been designed to address 40 Gb/s optical transmission experiment needs, and realized specific research transmitters.

This paper reports on very high speed large swing drivers suitable for the generation of high symbol rate spectrally efficient optical transmission signals.

An integrated selector-driver is designed for 100 Gbit/s operation and fabricated using 0.7 mum InP double-heterojunction bipolar transistor (DHBT) technology.