Publications

High-speed XOR and phase-detector circuit necessary for clock and data recovery were designed and fabricated in a self-aligned InP DHBT technology.

A single-ended InP transimpedance amplifier (TIA) for next generation high-bandwidth optical fiber communication systems is presented.

This study is specifically related to Cl-2-based plasma etching of InP surfaces.

A waveguide-integrated photodetector is hybrid packaged with an HBT-DEMUX into a receiver module for system experiments.

Fast optical detectors or optically controlled microwave devices are key elements of microwave photonic systems.

We describe in more detail a novel InP-based comb generator for optical orthogonal frequency division multiplexed (OFDM) transmission.

A high-speed layer and process compatible phototransistor based on the authors' InP-based double-heterostructure bipolar transistor technology is presented.

We present a high-speed layer- and process compatible phototransitor based on our InP-based double-heterostructure bipolar transistor (DHBT) technology.

We present a high-speed-layer- and process compatible phototransistor based on our InP-based double-heterostructure bipolar transistor (DHBT) technology.

HBTs offer advantages such as a high transconductance per unit area allowing high integration density of digital and analog functions; reduced low frequency noise making them attractive for low pha