A high-speed layer and process compatible phototransistor based on the authors' InP-based double-heterostructure bipolar transistor technology is presented.
We present a high-speed layer- and process compatible phototransitor based on our InP-based double-heterostructure bipolar transistor (DHBT) technology.
We present a high-speed-layer- and process compatible phototransistor based on our InP-based double-heterostructure bipolar transistor (DHBT) technology.
HBTs offer advantages such as a high transconductance per unit area allowing high integration density of digital and analog functions; reduced low frequency noise making them attractive for low pha
We realized a monolithic InP QPSK modulator photonic integrated circuit (PIC) and monolithic receiver PIC.
We review a few recent examples of monolithically integrated devices comprising a variety of heterogeneous functional elements such as fast-tunable wavelength converters, amplified optical equalize
In this paper we demonstrate an InP-based photonic multiwavelength transmitter realized by integrating an array of DBR lasers with modulators in Mach-Zehnder configuration.
In this article, we report on the modelling, design and characterisation of Indium phosphide (InP) double heterojunction bipolar transistor (DHBT) devices and integrated circuits (ICs) for next gen
A new metal-semiconductor barrier contact intermediate between a true Schottky barrier and a p-n junction, is demonstrated in InP.
Type-II InP/GaAsSb DHBTs are the first non-GaInAs -based transistors to show oscillation frequencies > 1 THz with the associated benefits of higher breakdown voltages, low power dissipation, a
