An InGaAs Metal/Semiconductor/Metal (MSM) photodetector with a dark current less than 1 mu A is described.
We have fabricated and characterized high-efficiency, long- wavelength PIN photodiodes on In0.53Ga0.47As/InP/GaAs wafers grown by metal organic vapor phase epitaxy.
We compare two uni-traveling-carrier photodiodes for high power applications.
We report, for the first time, intersubband absorption experiments in doped InGaAs/InAlAs multiquantum well superlattices and observe a resonance peak at a wavelength of lambda = 4.4microns which i
InGaAs/InP double heterostructure bipolar transistors with current gain beta ~ 630 have been realized using gas-source molecular beam epitaxy.
We demonstrate a voltage-tunable distributed Bragg reflector grown by chemical beam epitaxy that utilizes 31 periods of alternating InGaAs/InP multiple quantum well and bulk InP quarter-wave layers
A double heterostructure ridge waveguide with multiple quantum well InGaAs/InP core and InP cladding layers has been operated as a phase modulator at 1.52micron wavelength.
The chemistry of trichloride vapor phase epitaxy lends itself to the growth of ultra-high purity InGaAsP heterostructures.
Two types of mesa-type InGaAs/InP p-i-n photodiodes have been fabricated from wafers grown by chemical beam epitaxy (CBE): (1) a conventional diffused InGaAs homojunction and (2) a novel InP/InGaAs
InGaAs/InP heterostructure p-i-n photodiodes and two types of InGaAs/InP avalanche photodetectors have been fabricated from structures grown by atmospheric-pressure metalorganic chemical vapor depo
