An InGaAs/InP pseudo-heterojunction bipolar transistor (PHBT) with a thin emitter barrier is demonstrated.
Preparation and performance of separate avalanche and multiplication superlattice photodiodes is reported.
The photoluminescence characteristics of a 1.3micron not intentionally doped n-type InGaAsP grown lattice matched by liquid phase epitaxy in the V-grooves of a channeled InP substrate are compared
The fabrication and performance characteristics of an independently controllable closely spaced dual wavelength laser structure are described.
no abstract provided
The fabrication and performance characteristics of 1.3micron InGaAsP distributed feedback (DFB) lasers with multiquantum well (MQW) active layers are reported.
The fabrication and performance characteristics of a dual wavelength laser emitting near 1.3microns and 1.55microns are described.
The light emitted from the facet of a semiconductor laser diverges due to diffraction, and this limits the coupling efficiency of the light into a single mode fiber.
The fabrication and performance characteristics of a InGaAsP laser structure with a semi-insulating current confining layer are reported.
The present generation of optical transmission systems employs GaAlAs laser emitters operating at 0.8 to 0.9 jum.1 In this wavelength range fiber attenuation (about 4 dB/km) and especially chromati
