No abstract provided from esearch BL85.52003.
While consideration of the crystalline domains have long dominated research in understanding the properties of semi-crystalline polymers, a satisfactory understanding of crack growth in these mate
Over the past few years, we have developed methods for trace gas analysis based on tunable infrared diode laser spectrometry.
The development of a technique for moisture analysis in hermetic packages, based on tunable diode laser infrared spectrometry, has been pursued at AT&T Bell Labs and reported on at past moistur
A scheme for infrared generation without population inversion between subbands in quantum-well and quantum-dot lasers is presented.
During the processing of STIC wafers, the tantalum nitride is etched in a CF4 plasma. The underlying silicon nitride is briefly exposed to the plasma at the end of the tantalum nitride etch.
Mixtures of the gauche and trans-1-Halogenopropanes are trapped in rare gas solids at 4K and interconverted by infrared irradiation.
Infrared spectroscopy is widely used to measure the concentration of interstitial oxygen impurities in silicon.
The infrared properties of silica fibre and preform samples doped with up to about 10 wt% phosphorus concentration have been studied.
The FT-infrared spectra of two sexithiophenes having their end alpha,alpha'-positions substituted by it-hexyl or -thiohexyl groups, in neutral and doped states, are studied with the main aim of der
