Publications

We realized a monolithic InP QPSK modulator photonic integrated circuit (PIC) and monolithic receiver PIC.

We review a few recent examples of monolithically integrated devices comprising a variety of heterogeneous functional elements such as fast-tunable wavelength converters, amplified optical equalize

In this paper we demonstrate an InP-based photonic multiwavelength transmitter realized by integrating an array of DBR lasers with modulators in Mach-Zehnder configuration.

In this article, we report on the modelling, design and characterisation of Indium phosphide (InP) double heterojunction bipolar transistor (DHBT) devices and integrated circuits (ICs) for next gen

A new metal-semiconductor barrier contact intermediate between a true Schottky barrier and a p-n junction, is demonstrated in InP.

“Type-II” InP/GaAsSb DHBTs are the first non-GaInAs -based transistors to show oscillation frequencies > 1 THz with the associated benefits of higher breakdown voltages, low power dissipation, a

We report the performances of multifinger GaAsSb/InP double heterojunction bipolar transistors (DHBTs) designed for high power applications.

In this work we report the performances of an InP/GaInAs DHBT developed in III-V Lab with a TiW metal emitter.

InP/In sub 0.53 Ga 0.47 As avalanche photodiodes with separate absorption and multiplication regions (SAM-APDs) have been fabricated from wafers grown by chemical beam epitaxy (CBE), a growth tech

InP/InGaAs Heterojunction Bipolar Transistors (HBTs) have demonstrated excellent high-frequency performance and are widely used for optical fiber transmission.