We report the performances of multifinger GaAsSb/InP double heterojunction bipolar transistors (DHBTs) designed for high power applications.
In this work we report the performances of an InP/GaInAs DHBT developed in III-V Lab with a TiW metal emitter.
InP/In sub 0.53 Ga 0.47 As avalanche photodiodes with separate absorption and multiplication regions (SAM-APDs) have been fabricated from wafers grown by chemical beam epitaxy (CBE), a growth tech
InP/InGaAs Heterojunction Bipolar Transistors (HBTs) have demonstrated excellent high-frequency performance and are widely used for optical fiber transmission.
An InP/InGaAsP laser/laser monitor hybrid structure which demonstrates the use of channeled-substrate buried-heterostructure lasers or broad area double heterostructure devices as "on-board" back-f
Wide bandwidth (8 GHz) and a high gain-bandwith (70 GHz) have been achieved with InP/InGaAsP/InGaAs avalanche photodiodes (APDs) grown by chemical beam epitaxy (CBE).
InGaAs/InGaAsP/InP avalanche photodiodes with separate absorption, "grading", and multiplication regions (SAGM-APDs) have been fabricated for the first time from wafers grown by metalorganic chemic
The factors which limit the performance of an optical receiver are optical quantum noise, leakage noise of the detector, thermal noise introduced by the detector load resistor, and various forms of
Human Body Model (HBM) and Charged Device Model (CDM) ESD stressing have been utilized to evaluate the susceptibility of input protection circuits on a fineline NMOS test chip.
In this contribution, we provide a detailed analysis of the search operation for the Interval Merging Binary Tree (IMBT), an efficient data structure proposed earlier to handle typical anomalies in
