Publications

An optimized InP Double Heterojunction Bipolar Transistor (DHBT) technology is presented for millimeter-wave power amplifiers at E-band and higher frequencies.

We report the design and measurement of a 1:2 demultiplexer (DMUX) integrated circuit (IC) including a transimpedance amplifier (TIA) as input stage for best input sensitivity and automatic single-

We present the design, fabrication and measurement of two transimpedance amplifiers with single-ended input and differential output for optical fibre communication systems.

This paper reports on very high speed large swing digital-to-analog converter (DAC) suiting the generation of spectrally efficient optical transmission signals.

We evaluate the optical performance of the InP heterojunction bipolar transistors (DHBTs) designed for 100 Gbit/s circuit applications as a room temperature detector operating above 1 THz.

Indium Phosphide-based Double-Heterostructure Bipolar Transistors have high potential for analog, digital, and mixed-signal applications requiring extreme clock speed and high voltage swing.

A new dislocation etchant for InP has been developed which consists of HBr:H sub 2 O sub 2 :HCI:H sub 2 O in volume ratio of 20:2:20:20.

In this paper we present the design and optimization of decision and DEMUX circuits fabricated in a 0.7 μm InP HBT technology.

In this paper we present the design and optimization of decision and DEMUX circuits fabricated in a 0.7 µm InP HBT technology.

This overview presents activities in the field of InP HBT in Europe. In the first part, technological work of different groups with their particularities and recent results are presented.