Indium Phosphide-based Double-Heterostructure Bipolar Transistors have high potential for analog, digital, and mixed-signal applications requiring extreme clock speed and high voltage swing.
A new dislocation etchant for InP has been developed which consists of HBr:H sub 2 O sub 2 :HCI:H sub 2 O in volume ratio of 20:2:20:20.
In this paper we present the design and optimization of decision and DEMUX circuits fabricated in a 0.7 μm InP HBT technology.
This overview presents activities in the field of InP HBT in Europe. In the first part, technological work of different groups with their particularities and recent results are presented.
High-speed XOR and phase-detector circuit necessary for clock and data recovery were designed and fabricated in a self-aligned InP DHBT technology.
A single-ended InP transimpedance amplifier (TIA) for next generation high-bandwidth optical fiber communication systems is presented.
This study is specifically related to Cl-2-based plasma etching of InP surfaces.
A waveguide-integrated photodetector is hybrid packaged with an HBT-DEMUX into a receiver module for system experiments.
Fast optical detectors or optically controlled microwave devices are key elements of microwave photonic systems.
We describe in more detail a novel InP-based comb generator for optical orthogonal frequency division multiplexed (OFDM) transmission.
