The nature of the silicon oxide transition region in the vicinity of the Si/SiO2 interface is probed by infrared and x-ray photoelectron spectroscopies.
Films of Si sub 3 N sub 4 on Si substrates were prepared by both sputtering and low pressure chemical vapor deposition.
This paper continues the investigation into the ethylene-vinyl chloride copolymers prepared by partial reduction of poly(vinyl chloride).
We report infrared studies of the Landau level (LL) transitions in single layer graphene. Our specimens are density tunable and show in situ half-integer quantum Hall plateaus.
Chemically oxidized and subsequently HF stripped silicon surfaces are extremely clean with all dangling bonds saturated with hydrogen and display remarkably low electronic surface-recombination vel
Multiple internal infrared reflection spectroscopy has been used to identify the chemical nature of chemically oxidized and subsequently HF stripped silicon surfaces.
Polarized internal reflection spectroscopy has been used to characterize HF treated Si(111) surfaces.
The energy of the ground state to first excited state electronic transition in the electron bubble in liquid helium has been measured at 1.3K and found to be 0.122 eV at a pressure of 1.1 atm and i
The infrared reflectivity of a La0.67Ca0.33MnO3 single crystal is studied over a broad range of temperatures (78-340 K), magnetic fields (0-16 T), and wave numbers (20-9000 cm(-1)).
Dried alkoxide silica gels were studied by infrared spectroscopy after equilibration with room air and with vacuum.
