The strain-dependence of electron transport in bulk Si and deep-submicron MOSFETs is investigated by full-band Monte Carlo simulation.
Thin Si sub (1-x) Ge sub (x) films with x=0 to ~0.35 have been grown in an RTCVD apparatus.
We have calculated the band Structure of 1.55 mu m InGaAsP/InGaAsP multi-quantum-well structures using Luttinger-Kohn Hamiltonian taking into account the Strain in the quantum wells (QWs) and barri
We have calculated the band structure of 1.55 ?m InGaAsP/InGaAsP multi-quantum-well structures using Lüttinger-Kohn Hamiltonian taking into account the strain in the quantum wells (QWs) and barrier
A uniform, strained epitaxial film (>10angstroms) is not in thermodynamic equilibrium. rather cluster formation is expected.
Strained layer epitaxy is a process for the formation of new materials with a strain and composition modulation in the one to one hundred monolayer range.
A uniform, strained epitaxial film (>10angstroms) is not in thermodynamic equilibrium. rather cluster formation is expected.
The structural stability of ordered AB alloys on the diamond lattice is discussed from the point of view of the competition between bond-angle and heterogeneous bond-length constraints.
Low temperature Raman scattering measurements were carried out to characterize Si on SiO sub 2 structures formed by oxygen implantation and subsequent furnace or lamp annealing.
In order to facilitate and to meet the ever increasing demands for the wireless communication in the next decade and also to satisfy the high data rates for the new services, the future development
