Publications

Measurements of critical layer thicknesses and strain relaxation have been made for AlSb on GaSb(001) using ion scattering/particle induced x-ray techniques.

The GaSb/AlSb system is an excellent system for the study of optical and electronic properties in strained layers.

Strain and the critical thickness of the onset of strain relief in thin films of AlSb on GaSb(100) have been determined by a combination of ion channeling techniques and particle induced x-ray emi

Here, we report on significant material information provided by semi-contact phase-images in a wide range of hard III-nitride surfaces.

Strain due to lattice mismatch at the semiconductor interfaces can play an important role in determining both the thin film growth mechanism as well as the material electronic structure and physica

The relationship between lattice strain and electronic levels of In sub (x) Ga sub (1-x) As quantum wells intentionally lattice mismatched with respect to InP substrate has been investigated for th

In a piezoelectric material, strain gives rise to internally generated polarization fields. These electric fields can have profound effects on the optical properties of the material.

By in-situ relaxation of metastably strained Ge sub x Si sub (1-x)/Si heterostructures in a transmission electron microscope, we are quantitatively able to study dynamic misfit dislocation phenomen

The strain-dependence of electron transport in bulk Si and deep-submicron MOSFETs is investigated by full-band Monte Carlo simulation.

Thin Si sub (1-x) Ge sub (x) films with x=0 to ~0.35 have been grown in an RTCVD apparatus.