A method of stress control in microelectromechanical systems (MEMS) devices is presented that consists of creating counterbalancing structures to position stressed layers at the neutral plane of th
Cathodoluminescence and micro-Raman studies of GaAs on Si layers grown by the conformal method show a characteristic quasiperiodic modulation of the stress distribution perpendicular to the growth
We present a minimalistic approach to simulation of force transmission through granular systems.
We present a minimalistic approach to simulations of force transmission through granular systems.
We investigate the physical characteristics of Stress Induced Leakage Current (SILC) by means of Quantum Yield (QY) measurements and simulations.
In this memorandum we present additional results of the radius of curvature measurement of 1.3micron CSBH lasers.
Polyimide films used as inter-layer dielectrics in integrated circuits usually require curing at high temperature.
We have calculated the stress splitting of the A sub 1 -> T sub 2 optical transition of the neutral As sub (Ga) in the presence of two perturbations, each of which is small compared to the Jahn-
The fundamental optical absorption at the neural antisite defect in GaAs is an A sub 1 -> T sub 2 transition.
As discussed in a series of papers, 1 the solderless wrapped connection is an efficient and inexpensive method of connecting a wire to a terminal.
