InGaN/GaN multiple quantum wells (MQWs) were grown on (0001) sapphire substrates, which were first coated with thick GaN or AIN films, at relatively low temperatures (650 degrees C).
We have successfully grown non-polar GaN/AlN multiple quantum wells by plasma-assisted molecular beam epitaxy on R-plane sapphire substrates.
We have grown nonpolar GaN/AlN multiple quantum wells by plasma-assisted molecular-beam epitaxy on R-plane sapphire substrates.
ZnO nanotips are grown on epitaxial GaN/c-sapphire templates by metalorganic chemical vapor deposition.
Nonlinear optical glasses are attractive materials for fast all-optical switching devices because they combine nonlinear index coefficients substantially larger than SiO sub 2 with low absorption c
The mixed YBa sub 2 Cu sub (3-x) M sub x O sub (7-y) (M=Ni, Zn, Fe, Co and Al) phases have been characterized for their structural, magnetic and superconducting properties.
Superconducting Y sub 1 Ba sub 2 Cu sub 3 O sub (1-x) films were produced by metal molecular beam epitaxy with one e-beam and two thermal cells and a molecular oxygen gas source.
The structural thermal dependence in K sub 2 TeBr sub 6 resulting from the condensation of normal modes at the monoclinic-to- tetragonal and tetragonal-to-cubic phase transitions has been investiga
The a-plane MgxZn1-xO (0 = x = 0.25) films were grown on r-plane (0112) sapphire substrates using metal-organic chemical vapor deposition.
Structures of a set of pyrochlore related structures KNbWO (6), K(1.88)NbWO(6), and KNbWO(6).0.69D(2)0 have been determined by neutron powder profile analysis.
