The valence-electron contribution to the total energy of simple- cubic and rhombohedral arsenic has been calculated using local- density- functional theory and a scalar-relativistic version of the
(GaN/GaAlN/GaN)//Al2O3(00, 1) HEMT heterostructures have been studied by X-ray scattering techniques, transmission electron microscopy and atomic force microscopy.
Antimonide-based superlattices dedicated to the elaboration of opto-electronic devices have been studied by X-ray scattering techniques.
Thin Si sub (1-x) Ge sub (x) (x=0 to 0.5) films have been grown by RTCVD, a technique that combines conventional chemical vapor deposition and rapid thermal heating.
We show that high resolution transmission electron microscopy can be used directly to reveal the structure of the metal frame work and its defects in Ba sub 2 YCu sub 3 O sub 7.
The microstructure of amorphous hydrogenated boron nitride films, with nominal composition B sub 3 N:H, is characterized with respect to hydrogen bonding and distribution by combined application of
Resonance Raman Scattering studies are reported on freshly prepared ferric, ligand-free ferrous, and CO-bound ferrous cytochrome c- peroxidase.
High-resolution X-ray diffraction, low-temperature photoluminescence and transmission electron microscopy have been used to study InGaAs(P)/InP multi-quantum well structures grown on (100) InP.
We have carried out an X-ray study of twenty-well quarternary InGaAsP/InP structures grown on [100] InP by gas source molecular beam epitaxy.
Nuclear magnetic resonance is used to determine the electric field gradients and magnetic chemical shifts at the (sup 87Rb) sites in single crystals of Rb sub 0.30MoO sub 3 at several temperatures
