Publications

The development of group IV based heterostructures has provided an exciting new direction in layered semiconductor growth.

The development of group IV based heterostructures has provided an exciting new direction in layered semiconductor growth.

The application of high-resolution NMR spectroscopy to the structural analysis of copolymers is illustrated by a detailed investigation of the vinylidene fluoride (VF(2)) - tetrafluoroethylene (F

AlGaAs/InGaAs on GaAs substrate is the most commonly used material for QWIPs. Using these compounds, we have already demonstrated focal plane arrays from 4.5 to 15 mu m.

Single-crystalline, lattice-matched (Ca,Sr)F(2) films have been grown by molecular-beam epitaxy on GaAs (100) and (111) As substrates.

This article reviews our present understanding of surface reconstructions on clean silicon.

We have examined a series of samples consisting of 200A In sub x As sub 1-x As layered in a hetero-junction bipolar transistor (HBT) structure (In sub x Ga sub 1-x As on GaAs, followed by GaAs, A1G

High quality single crystal rare earth superlattices of Gd- Y with wavelength varying from 42 to 8 atomic layers were grown by the recently developed metal molecular beam epitaxy technique.

InGaN/GaN multiple quantum wells (MQWs) were grown on (0001) sapphire substrates, which were first coated with thick GaN or AIN films, at relatively low temperatures (650 degrees C).

We have successfully grown non-polar GaN/AlN multiple quantum wells by plasma-assisted molecular beam epitaxy on R-plane sapphire substrates.