We present detailed structural and chemical studies on ultrathin zirconia films grown by ultraviolet oxidation and natural (no ultraviolet light) oxidation of Zr precursor metal layers on SiO2-pass
The crystal structure of Ba11Fe8Ti9O41 was determined using single crystal and powder X-ray diffraction methods.
The graphitic phases of C and Si are studied, using the pseudopotential local-density-functional approach.
The perovskite SeCuO3- is unusual for possessing (i) a very small A-site (Se4+) radius, (ii) highly distorted Cu-O-Cu bond angles (alpha), and (iii) a ferromagnetic (FM) ground state.
Ferroelectric oxides, such as Pb(Zr,Ti)O-3, are useful for electronic and photonic devices because of their ability to retain two stable polarization states, which can form the basis for memory and
To confirm and extend further our previous prediction of a Curie transition in PVF2, we examined a copolymer of it with tetrafluoroethylene (81 mol % VF2).
The interest in "polymer electronics" has been growing rapidly in recent years, fueled by the vision of devices such as thin, flexible flat-panel displays that could be printed or stamped directly
Ferroelectric crystals are technologically important for their optoelectronic properties.
Using Schottky-barrier electro-reflectance spectroscopy, we have observed new direct optical transitions near 0.76 eV, 1.25 eV and 2.31 eV in an ordered Ge-Si superlattice.
The epitaxial growth of (semiconductor) layered structures yields novel material configurations leading to new solid state science and technology.
