Publications

We report an fee structure for the epitaxial Gd2O3 films grown on GaAs(100).

High-resolution X-ray diffraction (HRXRD) studies have been carried out to determine the structural perfection and periodicity for a number of high-quality InGaAs/InP strained-layer superlattices (

High-resolution X-ray diffraction (HRXRD) studies have been carried out to determine the structural perfection and periodicity for a number of high-quality InGaAs/InP superlattices grown by gas sou

High-resolution X-ray diffraction (HRXRD) studies have been carried out to determine the structural perfection and periodicity for a number of high-quality InGaAs/InP superlattices grown by gas sou

High-resolution X-ray diffraction (HRXRD) studies have been carried out to determine the structural perfection and periodicity for a number of high-quality InGaAs/InP superlattices grown by gas sou

Total energy calculations based on microscopic electronic structure are combined with position-space renormalization group calculations to predict the structural phase transitions of the Si(100) su

A novel liquid crystal phase was discovered which exhibits two seemingly incongruous characteristic features; namely, a smectic-A like layered structure along with a macroscopic (1micron) helical s

The crystal chemistry of Rare-Earth (RE) substituted high T sub c superconductors of the Ba sub 2 RECu sub 3 O sub (7- ) type structure has been investigated using X-ray diffraction on twinned cr

We report for the first time growth of the highest quality films of Metastable alpha -Sn.

We have used Medium Energy Ion Scattering (MEIS) and other techniques to investigate the structure and formation mechanisms of ultrathin (less than 10 nm) layers of Ta2O5 on Si.