This paper outlines the fundamental performance characteristics of DAFS and presents experimental results from an open-source DAFS prototype to quantify the performance effects of its key distingui
We have examined the structure and physical properties of paracrystalline molecular dynamics models of amorphous silicon.
The relative abundances of medium-size clusters X sub n sup (+, -,0) of X = Si, GE, Sn or Pb, with 7 = n = 30, as prepared in various ways after vapor-phase condensation, are determined by enthalpi
Single crystals of La(2)Mo(2)0(7), prepared by fused salt *electrolysis, were used for structural and electronic characterization. La (2)mo(2)0(7) is orthorhombic with a=6.034A, b=12.236A and c=3.
While Sr sub 2 YCu sub 3 O sub 7 is not a stable phase replacement of some Cu with Al, Pb, Co, or Fe leads to stable phases of formula Sr sub 2 YCu sub (3-x) M sub x O sub 7.
The application of transient junction current and capacitance techniques to the study of imperfection in semiconductor materials is reviewed.
The application of transient junction current and capacitance techniques to the study of imperfection in semiconductor materials is reviewed.
The application of transient junction current and capacitance techniques to the study of imperfection in semiconductor materials is reviewed.
Refractive index and density have been measured for Al sub 2 O sub 3 -P sub 2 O sub 5 -SiO sub 2 near the A1PO sub 4 join down to 78% silica with ratios of A1 to P from 0.5 to 2.0.
Refractive index and density have been measured for the system Al sub 2 O sub 3 -P sub 2 O sub 5 -SiO sub 2 near the AIPO sub 4 join.
