Publications

Displaying 31981 - 31990 of 37748

Structure of Highly Perfect Semiconductor Stained-Layer Superlattices: High-Resolution X-Ray Diffraction and Computer Similation Studies

High-resolution x-ray diffraction (HRXRD) measurements of strained-layer superlattices have been carried out using a four-crystal monochromator.

Structure of Highly Perfect Semiconductor Strained-Layer Superlattices: High-Resolution X-ray Diffraction and Computer Simulation Studies.

High-resolution x-ray diffraction (HRXRD) measurements of strained- layer superlattices (SLS's) have been carried out using a four- crystal monochromator.

Structure of hydrogenated Si-Ge and Si-SiN sub x amorphous semiconductors heterojunctions.

We determined by Extended X-ray Absorption Fine Structure the interface structure in hydrogenated amorphous Si-Ge and Si- SiN sub x multilayers.

Structure of Interfaces: The Case of the Elemental-Compound Semiconductor Heterostructure

A new approach to structural studies of heterostructure interfaces will be presented using the GaAs-Ge system as a model system.

Structure of ion implanted graphite fibers.

This paper reports on the effect of ion implantation on the structure of highly ordered benzene-derived graphite fibers (BDGF) using high resolution transmission electron microscopy (TEM).

Structure of poly(p-phenylene sulfide).

We have examined the unit-cell structure of the important high- temperature and high-strength polymer, poly(p-phenylene sulfide) (PPS); this has recently been in dispute, with two different models

Structure of Samarium Iodate Monohydrate.

Sm(IO sub 3)sub 3 . H sub 2 O is polar and isomorphous with Nd(IO sub 3)sub 3 . H sub 2 O and is of potential interest for its nonlinear optic properties.

Structure of Segregated Au Layers on Ni(110)-0.8% Au Alloy by Scanning Tunneling Microscopy.

The structure of the Au segregated Ni(110)-0.8% Au surface has been studied by scanning tunneling microscopy.

Structure of Si(111)-7x7 II.

The previously proposed island-dimer model of the Si(111)-7x7 surface [E. G. McRae, Surf. Sci.

Structure of Si-Ge amorphous semiconductor heterojunctions.

We determined by Extended X-ray Absorption Fine Structure (EXAFS) that the interfaces in hydrogenated amorphous Si-Ge superlattices are atomically abrupt and the interface atoms are bound on averag