Publications

Recently it has been shown that buried layers of single crystal, orientated CoSi sub 2 can be produced in silicon by implanting high doses of Co followed by a high temperature anneal.

Reported in this work are a series of experiments which demonstrate conditions by which metallic impurities may be gettered in a CMOS VLSI technology.

We present results of studies of orientational order of Langmuir- Blodgett monolayer and multilayer films based on second harmonic generation and linear absorption measurements.

We describe the results of experiments on bistable and multistable self-focusing devices using liquid suspensions of dielectric particles as the nonlinear medium.

Studies of the chemical reactions and photodissociation of size selected Al sup + sub n, Si sup + sub n, and Cu sup + sub n with n upto 30 will be described.

This TM is to be published in Springer Series in Surface Science, ed., H. J.

Studies of Telephone Line Wire Spacing Problems By J. A. CARR and F. V.

We have used electron channeling and scanning electron microscopy to study the crystallinity and morphology of epitaxial CaF sub 2 layers on CoSi sub 2/ Si(111) substrates before and after a rapid

The solid-liquid crystalline phase transition of poly[bis- (4-ethylphenoxy)phosphazene] (PBEPP) has been studied by solid state sup (31) P NMR.

Collision-induced coherent Raman resonances between Zeeman sublevels of the ground (3(2)S) state of sodium vapor are observed and characterized.